Ever thought about using a storage technology that is 1000x faster than current SSDs? Well, your wait is over! Intel and Micron launch 3D XPoint storage technology which will be 1000 times faster than currents SSDs which we use.

This can be conveniently used as Storage and RAM, i.e. it can be used as non volatile as well as systems memory.

3D XPoint Specs and Features

This new launch could easily replace the computer’s solid state drive as well as its RAM. It is a major achievement in technology of memory processing. Since the launch of NAND flash in the year 1989, this is the first category to have been introduced. It is hard, durable and extremely fast processing. It has both the read and writes working 1000x faster than ever; the density is 10x more than previous one, which gives more storage capacity in same space, energy efficient and easily affordable. It is developed in such a way that it will have a high endurance, even after repetitive storage tasks it has to pass through.

Vice president of Intel, Rob Crooke states that, as its means of linking the network of an existing PC, the new class memory will use PCIe, which is also known as PCI Express and it has the fastest bus speed. However, new ways are being developed because PCIe is not strong to handle the 3D XPoint speed. The new development also will change the architecture of motherboard entirely.

3D XPoint Storage Technology by Intel and Micron

Get ready for a new PC experience, the high performance index by 3D XPoint will enhance the PC features, especially for gamers because a large amount of data can be stored into memory in real and quick time. Apart from this, any applications with small storage latency requirements will also benefit from this new memory class.

The Cross Point stores the data in entirely different way. The property change of the memory is used by cross point storage. It does not store in a traditional way.

Sneak Peak into 3D XPoint technology:

  1. Array Structure: it has a cross point array structure with perpendicular conductors which connect thickly packed memory cells that are about 128 billion. Every cell of the memory stores a single bit data. This results in high performance.
  2. Gathered into a sheaf: The memory cells are piled up in multiple layers, along with fit cross point structure of array. The current technology is capable of storing 128 GB across two layers of memory, but in future it might increase the numbers of layer, which would further increase in system capacity.
  3. Memory selector: Each selector is sent different amount of voltage for accessing the memory to write or read. It will cut the need of transistors hence resulting in cost reduction.
  4. Cell switching is fast: the small size of cell will result in fast switching and algorithm can be written quickly.

The production of 3D XPoint is currently under development with Intel and Micron, and it is to be sampled this year with selected customers.